Remember,Įmitter-base junction is always in forward bias and base-collector junction is in reverse bias.Įmitter-base junction is forward bias so that you have to connect n-type emitter to the negative battery terminal and p-type base to the positive battery terminal.Ībove figure shows a forward bias to an emitter-base junction and reverse bias to the base-collector junction. NPN transistor workingīefore the understand working of transistor first clear this below topic because this will make easy for you to understand. Hope you understand if don’t yet not worry read their working below you totally understand how this happens. It is so simple you only have to draw the current direction in the symbol of the transistor. So here current is flowing from base to emitter. Now you know emitter to base is always in forward bias and base-collector is always in reverse bias. One is between emitter and base, second is between base and collector. here we give a two supply to the transistor. This diagram symbol only shows the direction of the current. This diagram is not that much complicated as you think. Here we discuss in details about the how to draw a diagram of this transistor. Diagram of transistorĪs a previous blog, we also see this diagram if you did not read that yet read that also- What is transistor? Definition, symbol, construction & terminals of transistor Before going to work let talk about the diagram of NPN transistor. On this basic knowledge, we can easily understand about the working of the transistor. In this transistor emitter and collector is P-type semiconductors and a base is n-type of semiconductors.Īs you know p-type of semiconductors contains majority charge carrier as holes and n types of semiconductors contain majority charge carrier as an electron. The main part of the working of this transistor is the middle part or base part which is p-type. Here P-type region has very thin layer respect to other two regions. NPN transistor structure you can see below. NPN transistor contains three semiconductors and two PN junctions between them. A device which formed by two n-type semiconductors separated by a p-type semiconductor.
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